Examples

This example shows how to setup a detailed skin including a transport layer to enabled the detailed MIS model in Quokka3. The detailed MIS model resolves band-bending in the c-Si wafer and direct tunneling through an insulator.

It also contains a lumped skin version of the same example. It shows how to use the simplified version of the MIS model to represent a non-ohmic resistivity caused by the tunnel oxide, while desribing recombination via a lumped J0skin.

The investigated cell is the former 25.7% record cell of Fraunhofer ISE: A. Richter et al., n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation, SOLMAT 2017